Search results for "Ion beam analysis"
showing 10 items of 16 documents
Oxy-nitrides characterization with a new ERD-TOF system
2017
Abstract A new time-of-flight (TOF) camera was installed on Elastic Recoil Detection (ERD) measurement setup on the Tandem Accelerator at Universite de Montreal. The camera consists of two timing detectors, developed and built by the Jyvaskyla group, that use a thin carbon foil and microchannel plates (MCP) to produce the start and stop signals. The position of the first detector is fixed at 18 cm from the target, while the position of the second detector can be varied between 50 and 90 cm from the first detector. This allows to increase time resolution by increasing the distance between the time-of-flight detectors or to increase solid angle by decreasing the distance. Moving the detector …
Design of a 10 GHz minimum-B quadrupole permanent magnet electron cyclotron resonance ion source
2020
This paper presents a simulation study of a permanent magnet electron cyclotron resonance ion source (ECRIS) with a minimum-B quadrupole magnetic field topology. The magnetic field is made to conform to conventional ECRIS with $B_\textrm{min}/B_\textrm{ECR}$ of 0.67 and a last closed magnetic isosurface of 1.86$B_\textrm{ECR}$ at 10 GHz. The distribution of magnetic field gradients parallel to the field, affecting the electron heating efficiency, cover a range from 0 to 13 T/m, being similar to conventional ECRIS. Therefore it is expected that the novel ion source produces warm electrons and high charge state ions in significant number. Single electron tracking simulations are used to estim…
Thin Film Characterisation Using MeV Ion Beams
2009
This chapter focuses on the characterisation of very thin films having thicknesses from a few nanometres to tens of nanometres. The driving force for the ion beam analysis community has mostly been the rapid development of microelectronics — all the elements in new thin SiO2 replacing dielectrics, diffusion barriers, and silicide contacts need to be analysed with a depth resolution even better than a nanometre. This together with new film deposition techniques like atomic layer deposition (ALD) [1] have given a push to the ion beam analysis community to develop new and better techniques using energetic (>0.5 MeV) ion beams.
Elastic Recoil Detection Analysis
2008
In 1976, a Canadian group described in detail for the first time a new ion beam analytical method based on the elastic recoil of target nuclei collided with high-energy heavy incident ions. In this case, 25–40-MeV 35Cl impinged on a multilayer C or Cu (backing)/LiF or LiOH/Cu (30–150 nm)/LiF or LiOH and H, Li, O, and F recoiled atoms were detected. These exemplified the main characteristics of elastic recoil detection analysis (ERDA): its sensitivity to depth distribution and its ability to detect light elements in heavy substrates. In 1979, the use of megaelectronvolt energy 4He beams permitted the use of ERDA to be extended to depth profiling of hydrogen isotopes in the near-surface regio…
Phosphites as precursors in atomic layer deposition thin film synthesis
2021
We here demonstrate a new route for deposition of phosphorous based materials by atomic layer deposition (ALD) using the phosphites Me3PO3 or Et3PO3 as precursors. These contain phosphorous in the oxidation state (III) and are open for deposition of reduced phases by ALD. We have investigated their applicability for the synthesis of LiPO and AlPO materials and characterized their growth by means of in situ quartz crystal microbalance. Phosphites are good alternatives to the established phosphate-based synthesis routes as they have high vapor pressure and are compatible with water as a coreactant during deposition. The deposited materials have been characterized using XPS, x-ray fluorescence…
Variation of lattice constant and cluster formation in GaAsBi
2013
We investigate the structural properties of GaAsBi layers grown by molecular beam epitaxy on GaAs at substrate temperatures between 220–315 C. Irrespective of the growth temperature, the structures exhibited similar Bi compositions, and good overall crystal quality as deduced from X-Ray diffraction measurements. After thermal annealing at temperatures as low as 500 C, the GaAsBi layers grown at the lowest temperatures exhibited a significant reduction of the lattice constant. The lattice variation was significantly larger for Bi-containing samples than for Bi-free low-temperature GaAs samples grown as a reference. Rutherford backscattering spectrometry gave no evidence of Bi diffusing out o…
Ion-sputtering deposition of Ca–P–O films for microscopic imaging of osteoblast cells
2007
Abstract An ion-beam sputtering technique was used to produce Ca–P–O films on borosilicate glass at room temperature from hydroxyapatite targets using nitrogen, argon and krypton beams at different acceleration voltages. The sputtering target was pressed from high purity hydroxyapatite powder or mixture of high purity hydroxyapatite powder and red phosphorus in order to optimise the film composition. The film composition, determined using time-of-flight elastic recoil detection analysis (TOF–ERDA), was found to be strongly dependent on the ion energy used for deposition. By extra doping of the target with P the correct Ca/P atomic ratio in the deposited films was reached. The films deposite…
Ion beam analysis and alpha spectrometry of sources electrodeposited on several backings
1998
Abstract Alpha sources of several activities were prepared by electrodeposition of natural uranium onto four different backings: stainless steel, Ni, Mo and Ti. The influence of the activity, the type of backing, and the process of heating the source on the energy resolution of the spectra were investigated using alpha spectrometry and Rutherford Backscattering Spectrometry (RBS) techniques. Diffusion profiles of the radioactive deposits in the backings were obtained from RBS and related to the results using alpha spectrometry
Formation of cobalt silicide films by ion beam deposition
2006
Abstract Thin films of cobalt silicide are widely used as metallization in very large-scale integrated electronic circuits. In this study, Co ions were deposited on Si(1 1 1) wafers by a high beam current filter metal vacuum arc deposition (FMEVAD) system. Surface silicide films were formed after annealing from 500 to 700 °C for 30 min. The results show that a thin CoSi2 surface layer with both a smooth surface topography and sharp interface can be achieved by annealing at 700 °C. The CoSi phase and O contamination were observed in the samples that were annealed at lower temperatures.
Thin film growth into the ion track structures in polyimide by atomic layer deposition
2017
Abstract High-aspect ratio porous structures with controllable pore diameters and without a stiff substrate can be fabricated using the ion track technique. Atomic layer deposition is an ideal technique for depositing thin films and functional surfaces on complicated 3D structures due to the high conformality of the films. In this work, we studied Al2O3 and TiO2 films grown by ALD on pristine polyimide (Kapton HN) membranes as well as polyimide membranes etched in sodium hypochlorite (NaOCl) and boric acid (BO3) solution by means of RBS, PIXE, SEM-EDX and helium ion microcopy (HIM). The focus was on the first ALD growth cycles. The areal density of Al2O3 film in the 400 cycle sample was det…